Patent · US Active

Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device

US9887139B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Gerhard Prechtl · Rosegg, AT
Gebhart Dippold · Finkenstein, AT

Key dates

Filing date	Dec 28, 2011
Grant date	Feb 6, 2018
Priority date	—
Expiry date	Jan 7, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface, and forming a HEMT-structure above the <111>-surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.