Methods for manufacturing poly-silicon thin film transistor and array substrate
US9887216B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | May 10, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
The present disclosure provides a poly-silicon TFT, its manufacturing method, an array substrate and its manufacturing method. The method for manufacturing the poly-silicon TFT includes a step of, subsequent to the formation of an amorphous-silicon active layer and a source electrode of the TFT, applying an electrical signal to the source electrode, so as to maintain the source electrode at a predetermined temperature for a predetermined time period, thereby to crystallize the amorphous active layer into a poly-silicon active layer due to heat generated by the source electrode and transferred to the amorphous active layer.
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