Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device
US9887303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.