Method of manufacturing solar cell
US9887314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.