Semiconductor light emitting device and method for manufacturing same

US9887328B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Hideyuki Tomizawa · Kanazawa, JP
• Akihiro Kojima
• Miyoko Shimada · Yokohama, JP
• Yosuke Akimoto · Yokohama, JP
• Hideko Mukaida · Tokyo, JP
• Mitsuyoshi Endo · Tokyo, JP
• Hideto Furuyama · Yokohama, JP
• Yoshiaki Sugizaki · Yokohama, JP
• Kazuo Fujimura · Tobetsu, JP
• Shinya Ito · Osaka, JP
• Shinji Nunotani · Itoshima, JP

Key dates

• Filing date: Jul 10, 2014
• Grant date: Feb 6, 2018
• Expiry date: Oct 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/856

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.