Organic thin film transistor and a manufacturing method of the same

US9887374B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Hongyuan Xu · Longbeilingcun, CN
• Changi Su · Tangxia, CN

Key dates

• Filing date: Dec 31, 2015
• Grant date: Feb 6, 2018
• Expiry date: May 3, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/103

Abstract

An organic thin film transistor (OTFT) is disclosed herein. The OTFT has a substrate, a data line, a transfer pad, a source electrode, a drain electrode, an active pattern, a first insulating layer, a gate electrode, a second insulating layer, and a transparent electrode. The data line and the transfer pad are disposed on the substrate. The source electrode and the drain electrode are disposed on the substrate, the data line, and the transfer pad. The active pattern is disposed on the data line, the transfer pad, the substrate, the source electrode, and the drain electrode. With the disposition of the active pattern on the source electrode and the drain electrode, the source electrode and the drain electrode are free from the bombardment of the plasma.