Patent · US Active

Radio frequency coupling structure and a method of manufacturing thereof

US9887449B2 · kind B2 · utility

6Cited by

48References

20Claims

0Family size

Assignee

NXP USA, Inc. · US

Inventors

Li Qiang · Huangyang, CN
Olin L. Hartin · Chandler, US
Ralf Reuter · Landshut, DE
Ziqiang Tong · Ottobrunn, DE

Key dates

Filing date	Aug 29, 2014
Grant date	Feb 6, 2018
Priority date	—
Expiry date	Sep 1, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/09981
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A radio frequency transmission structure couples a RF signal between a first and a second radiating elements arranged at a first and a second sides of a first dielectric substrate, respectively. The RF coupling structure comprises: a hole arranged through the first dielectric substrate, a first electrically conductive layer arranged on a first wall of the hole to electrically connect a first and a second signal terminals, a second electrically conductive layer arranged on a second wall of the hole opposite to the first wall to electrically connect a first and a second reference terminals. The first electrically conductive layer is separated from the second electrically conductive layer. The hole extends beyond the first wall away from the second wall.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.