Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods
US9887668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.