Methods of forming MgO barrier layer

US9890449B2 · kind B2 · utility

Assignee

• Seagate Technology LLC · US

Inventors

• Qing He · San Jose, US
• Jae-Young Yi · Prior Lake, US
• Eric W. Singleton · Pretoria, ZA

Key dates

• Filing date: Apr 29, 2015
• Grant date: Feb 13, 2018
• Expiry date: Dec 23, 2035

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B5/3163
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.