Thermal sensor and method for producing a thermal sensor
US9891113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2014 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Feb 17, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/123
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a thermal sensor and a method for producing a thermal sensor of this type having a low signal-to-noise ratio at relatively high signal strengths. To this end, a thermoelectric generator is combined with a field effect transistor and a diode. Owing to its integrated diode and the barrier effect associated therewith, the thermal sensor is suitable for the economical and efficient design of imaging sensor arrays for converting thermal radiation into electrical signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.