Patent · US Active

Mask

US9891518B2 · kind B2 · utility

1Cited by
3References
3Claims
0Family size

Assignees

Inventors

Key dates

Filing dateNov 19, 2014
Grant dateFeb 13, 2018
Priority date
Expiry dateDec 26, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/00
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A mask, comprising an opaque region, a first semi-transparent region, and a second semi-transparent region. The transmittance of the second semi-transparent region is less than that of the first semi-transparent region. The mask solves the over-etching problem caused by the difference between the thicknesses of photoresist in different regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.