Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US9892800B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Jul 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multi-gate NOR flash thin-film transistor (TFT) string arrays (“multi-gate NOR string arrays”) are organized as stacks of horizontal active strips running parallel to the surface of a silicon substrate, with the TFTs in each stack being controlled by vertical local word-lines provided along one or both sidewalls of the stack of active strips. Each active strip includes at least a channel layer formed between two shared source or drain layers. Data storage in the TFTs of an active strip is provided by charge-storage elements provided between the active strip and the control gates provided by the adjacent local word-lines. Each active strip may provide TFTs that belong to one or two NOR strings, depending on whether one or both sides of the active strip are used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.