Semiconductor device with reduced leakage current and fabricating method thereof

US9893107B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chia-Yu Wei · Tainan, TW
• Hsin-Chi Chen · Tainan, TW
• Ssu-Chiang Weng · New Taipei, TW
• Yung-Lung Hsu · Tainan, TW
• Yen-Liang Lin · Taichung, TW
• Chin-Hsun Hsiao

Key dates

• Filing date: Sep 17, 2015
• Grant date: Feb 13, 2018
• Expiry date: Sep 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.