Pixel structure

US9893117B2 · kind B2 · utility

Assignee

• CMOSIS BVBA · BE

Inventors

• Guy Meynants · Retie, BE
• Koen Van Wichelen · Heverlee, BE

Key dates

• Filing date: Feb 13, 2014
• Grant date: Feb 13, 2018
• Expiry date: Oct 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8057

Abstract

A pixel structure comprises an epitaxial layer (1) of a first conductivity type. A photo-sensitive element comprises a first region (4) of a second conductivity type and a second region (3) of the first conductivity type positioned between the epitaxial layer (1) and the first region (4). A charge storage node (ø2) is arranged to store charges acquired by the photo-sensitive element, or to form part of a charge storage element. A third region (2) of the second conductivity type is positioned between the charge storage node and the epitaxial layer. The pixel structure further comprises a charge-to-voltage conversion element (13) for converting charges from the charge storage node to a voltage signal and an output circuit (21, 22) for selectively outputting the voltage signal from the pixel structure.