Method for manufacturing semiconductor device
US9893142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Apr 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.