Semi-insulating silicon carbide monocrystal and method of growing the same

US9893152B2 · kind B2 · utility

Assignee

• INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xiaolong Chen · Beijing, CN
• Chunjun Liu · 安丰镇, CN
• Tonghua Peng · Beijing, CN
• Longyuan Li · Tangxia, CN
• Bo Wang · Tuji, CN
• Gang Wang · Milpitas, US
• Wenjun Wang · Nagaokakyo, JP
• Yu Liu · Kawasaki, JP

Key dates

• Filing date: Dec 6, 2011
• Grant date: Feb 13, 2018
• Expiry date: Nov 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/605
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave de…