Method for fabricating a metallic oxide thin film transistor
US9893173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.