Semiconductor structure with template for transition metal dichalcogenides channel material growth
US9893188B2 · kind B2 · utility
2Cited by
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19Claims
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Key dates
| Filing date | May 4, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | May 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, a buffer layer, and a two-dimensional layered material. The buffer layer is above the substrate and is formed from one of SiC and a nitride-based material. The two-dimensional layered material is above the buffer material. The construction as such permits formation, e.g., of a channel of a transistor from the two-dimensional layered material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.