Thin-film transistor including a gate electrode with a side wall insulating layer and display device
US9893193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.