Semiconductor device and method for manufacturing the same
US9893200B2 · kind B2 · utility
20Cited by
54References
14Claims
0Family size
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Key dates
| Filing date | Dec 17, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Dec 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.