Light emitting diode and manufacturing method therefor
US9893233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2014 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.