Patent · US Active

Light emitting element and method of manufacturing the same

US9893492B2 · kind B2 · utility

3Cited by
5References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 28, 2016
Grant dateFeb 13, 2018
Priority date
Expiry dateJun 28, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2304/12
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.