Magnetoresistive element, magnetic head using magnetoresistive element, and magnetic reproducing device
US9899044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2015 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.