Patent · US Active

Metallic nanomesh

US9899117B2 · kind B2 · utility

1Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 2014
Grant dateFeb 20, 2018
Priority date
Expiry dateJun 6, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24331
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.