Group III nitride semiconductor, and method for producing same
US9899213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2017 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Feb 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02425
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.