Patent · US Active

Semiconductor device

US9899336B2 · kind B2 · utility

0Cited by
0References
10Claims
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Assignee

Inventors

Key dates

Filing dateApr 4, 2014
Grant dateFeb 20, 2018
Priority date
Expiry dateApr 4, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18301
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A scale-like portion wherein metal plating is changed into a scale-like form is provided by continuously carrying out laser spot irradiation on a lead frame, the front surface of which is coated with the metal plating. The scale-like portion is disposed in an optional portion of the lead frame, for example, in the vicinity of a gate break mark, in an outer peripheral portion in a region sealed with a molding resin, or around a semiconductor element. The adhesion between the lead frame and the molding resin improves owing to the anchor effect of the scale-like portion, and it is thus possible to suppress the molding resin separating from the lead frame.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.