Patent · US Active

Semiconductor integrated circuit device having a standard cell which includes a fin

US9899381B2 · kind B2 · utility

6Cited by
0References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 22, 2016
Grant dateFeb 20, 2018
Priority date
Expiry dateFeb 22, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin constitute an active transistor. The fin and a dummy gate line provided in parallel with the gate line constitute a dummy transistor. The active transistor shares a node as its source or drain with the dummy transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.