Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
US9899392B2 · kind B2 · utility
0Cited by
9References
13Claims
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Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.