Thin film transistor substrate and display device including the same
US9899422B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Jan 21, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Apr 15, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate includes a base substrate, a first metallic layer including a gate electrode of a thin film transistor and an island electrode spaced apart from the gate electrode on the base substrate, a semiconductor layer of which a portion thereof overlaps the gate electrode of the first metallic layer, and a second metallic layer including a source electrode and a drain electrode of the thin film transistor which are spaced apart from each other on the portion of the semiconductor layer. The source electrode of the thin film transistor overlaps the island electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.