Methods of forming silicide regions and resulting MOS devices

US9899494B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tan-Chen Lee
• Bor-Wen Chan · Baoshan, TW

Key dates

• Filing date: Sep 19, 2014
• Grant date: Feb 20, 2018
• Expiry date: Sep 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.