Method of fabricating semiconductor device
US9899497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Nov 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming an active pattern protruding orthogonally from a substrate; forming a preliminary gate structure on the active pattern to cross the active pattern; etching the active pattern to form preliminary recess regions at both sides of the preliminary gate structure, wherein each of the preliminary recess regions is formed to define a delta region in an upper portion of the active pattern; forming a sacrificial layer on inner side surfaces and a bottom surface of the active pattern exposed by each of the preliminary recess regions; etching the delta regions and the sacrificial layer to form recess regions having a ‘U’-shaped section; and forming source/drain regions in the recess regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.