Thin-film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display apparatus
US9899532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.