Group III nitride semiconductor and method for producing same
US9899564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2017 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Group III nitride semiconductor containing: a RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMO4 substrate, having therebetween a dissimilar film that contains a material different from the RAMO4 substrate, and has plural openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.