Patent · US Active

Organic field effect transistor and method for producing the same

US9899616B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

Novaled GmbH · DE

Inventors

Bjoern Luessem · Dresden, DE
Alexander Zakhidov · Austin, US
Hans Kleeman · Dresden, DE
Karl Leo · Dresden, DE

Key dates

Filing date	Jun 19, 2012
Grant date	Feb 20, 2018
Priority date	—
Expiry date	Jun 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10K85/631
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.