Patent · US Active

Artificial microstructure and artificial electromagnetic material using the same

US9899742B2 · kind B2 · utility

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1References
21Claims
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Key dates

Filing dateOct 27, 2011
Grant dateFeb 20, 2018
Priority date
Expiry dateDec 27, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24802
  • WIPO fieldTelecommunications
  • WIPO sectorElectrical engineering

Abstract

An artificial microstructure used in artificial electromagnetic material includes a first line segment and a second line segment. The second line segment is perpendicular to the first line segment. The first line segment and the second line segment intersect with each other to form a cross-type structure. The present disclosure further relates to an artificial electromagnetic material using the artificial microstructure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.