Solid-state imaging unit and electronic apparatus with a signal charge accumulated in a photoelectric conversion section that is divided to be read in predetermined times of intermediate transfer operations and a complete transfer operation
US9900537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Mar 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.