Production method of SiC crystal
US9903047B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jun 17, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jul 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.