Patent · US Active

Titanium nitride for MEMS bolometers

US9903763B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Ashwin Samarao · Sunnyvale, US
Gary O'Brien · Palo Alto, US
Ando Feyh · Palo Alto, US
Fabian Purkl · Gerlingen, DE
Gary Yama · Mountain View, US

Key dates

Filing date	Sep 26, 2014
Grant date	Feb 27, 2018
Priority date	—
Expiry date	Sep 26, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG01J5/024
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.