Thermal poling method, piezoelectric film and manufacturing method of same, thermal poling apparatus, and inspection method of piezoelectric property
US9903898B2 · kind B2 · utility
1Cited by
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12Claims
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Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/078
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.