TFT device for measuring contact resistance and measurement method for contact resistance
US9903904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/84
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
TFT device for measuring a contact resistance and measurement method for a contact resistance are disclosed. The TFT includes an active layer, a gate electrode and a gate insulation layer. The active layer includes a channel and at least three doping regions, wherein, two of the at least three doping regions is connected through a channel, when measuring the contact resistance, using two of the at least three doping regions as testing points for measuring. The gate electrode disposed correspondingly to the channel. The gate insulation layer for insulating the active layer from the gate electrode. The uniformity of the present invention is well, the manufacturing process, the film forming quality and the interface property are similar in a maximum degree. Accordingly, a measurement accuracy is increased, saving the distribution region at the same time, increasing the utilization of the experimental region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.