Resist pattern hardening material and method of fabricating the same
US9904171B2 · kind B2 · utility
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Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jan 31, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive tone photoresist etching development agent for a photoresist film containing acid liable groups includes 0.5 to 2% by weight of tetramethylammonium hydroxide (TMAH), 1 to 20% by weight of an additive having at least two polar functional groups and at least one solvent. The additive has a molecular weight higher than 40, the solvent is water or alcohol, and the agent treated photoresist film retains at least 20% of acid liable groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.