Conductive film forming method and sintering promoter
US9905339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1476
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a conductive film forming method using photo sintering, a conductive film having low electric resistance is easily formed. Disclosed is a conductive film forming method in which a conductive film is formed using a photo sintering, which includes the steps of: forming a liquid film made of a copper particulate dispersion on a substrate, drying the liquid film to form a copper particulate layer, subjecting the copper particulate layer to photo sintering to form a conductive film, attaching a sintering promoter to the conductive film, and further subjecting the conductive film having the sintering promoter attached to photo sintering. The sintering promoter is a compound which removes copper oxide from metallic copper. Thereby, the sintering promoter removes a surface oxide film of copper particulates in the conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.