Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
US9905341B2 · kind B2 · utility
0Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2013 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jun 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/023
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.