Manufacturing method of semiconductor device comprising oxide semiconductor film
US9905435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.