Mask read-only memory device and fabrication method thereof
US9905566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jan 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/00
Abstract
The disclosed subject matter provides a mask read-only memory (M-ROM) device and fabrication method thereof. In an M-ROM device, a first layer having a first type doping is formed in a substrate. A plurality of buried lines is formed in the first layer of the substrate. The plurality of buried lines are arranged in parallel in a first direction and isolated from each other. An epitaxial growth process is used to form a second layer on the first layer of the substrate. A plurality of diodes is formed in the second layer. The plurality of diodes is arranged in an array. Each diode includes a first electrode having a second type doping and connecting with one of the plurality of buried lines, and a second electrode having a first type doping and located on the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.