Method for manufacturing thin film transistor, thin film transistor, and array substrate and display device using the same
US9905580B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Jul 20, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
The present disclosure relates to the field of display technology and provides a method for manufacturing a TFT, the TFT, an array substrate including the TFT, and a display device. The method includes steps of forming a pattern of a gate electrode on 5 a base substrate, forming a gate insulation layer on the base substrate, and forming patterns of a source electrode and a drain electrode arranged above the gate insulation layer. The method further includes forming an antioxidation metal protection layer on a surface or surfaces of the gate electrode, the source electrode and/or the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.