Method for manufacturing TFT, array substrate and display device

US9905592B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Tongshang Su · Beijing, CN
• Shengping Du · Beijing, CN
• Ning Liu · Shenyang, CN
• Dongfang Wang · Lexington, US
• Guangcai Yuan · Beijing, CN

Key dates

• Filing date: Jul 27, 2016
• Grant date: Feb 27, 2018
• Expiry date: Jul 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.