Super-junction structure and method for manufacturing the same and semiconductor device thereof
US9905636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
The present disclosure relates to a super-junction structure, a method for manufacturing the super-junction structure and a semiconductor device including the super-junction structure. The super-junction structure includes an epitaxy layer of a first doping type and a plurality of first pillar regions of a second doping type which are formed in the epitaxy layer and are separated from each other. Each of the first pillar regions has a doping concentration that decreases from bottom to top. A portion of the epitaxy layer between adjacent ones of the first pillar regions is a second pillar region. The first pillar regions and the second pillar region are arranged alternatively to form the super-junction structure. The first pillar regions are characterized by the doping concentration that decreases from bottom to top so that the super-junction structure has a relatively high breakdown voltage and a relatively low on resistance. Moreover, the super-junction structure changes a path of an avalanche current and thus suppresses an avalanche current so that the device is not easily damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.