Semiconductor devices and methods of manufacturing the same
US9905676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
Methods of forming an integrated circuit device are provided. The methods may include forming a gate structure on a substrate, forming a first etch mask on a sidewall of the gate structure, anisotropically etching the substrate using the gate structure and the first etch mask as an etch mask to form a preliminary recess in the substrate, forming a sacrificial layer in the preliminary recess, forming a second etch mask on the first etch mask, etching the sacrificial layer and the substrate beneath the sacrificial layer using the gate structure and the first and second etch masks as an etch mask to form a source/drain recess in the substrate, and forming a source/drain in the source/drain recess. A sidewall of the source/drain recess may be recessed toward the gate structure relative to an outer surface of the second etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.