Lateral insulated-gate bipolar transistor
US9905680B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A lateral insulated gate bipolar transistor comprises a substrate (10); an anode terminal located on the substrate, comprising: an N-type buffer region (51) located on the substrate (10); a P well (53) located in the N-type buffer region; an N-region (55) located in the P well (53); two P+ shallow junctions (57) located on a surface of the P well (53); and an N+ shallow junction (59) located between the two P+ shallow junctions (57); a cathode terminal located on the substrate; a draft region (30) between the anode terminal and cathode terminal; and a gate (62) between the anode terminal and cathode terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.